| PART |
Description |
Maker |
| CHA5051-QDG |
7-16GHz Medium Power Amplifier
|
United Monolithic Semiconductors
|
| CHA5052-QGG |
7-16GHz High Power Amplifier
|
United Monolithic Semiconductors
|
| CHA2066RBF_24 CHA2066RBF CHA2066RBF/24 |
10-16GHz Self biased Low Noise Amplifier
|
United Monolithic Semicondu...
UMS[United Monolithic Semiconductors]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大
5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
Single-band power amplifiers
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| 2SC3072 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1802 E000561 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| PDW06401 |
16GHz 2-way Wilkinson Power Divider
|
Dielectric Laboratories...
|
| AWT6276RM20P8 |
HELP PCS/WCDMA 3.4 V/29.5 dBm Linear Power Amplifier Module 1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS, Inc.
|
